RECRYSTALLIZATION BY RAPID THERMAL ANNEALING OF IMPLANTED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS SI FILMS

被引：8

作者：

ALVI, NS

TANG, SM

KWOR, R

FULCHER, MR

机构：

[1] UNIV NOTRE DAME,DEPT ELECT & COMP ENGN,NOTRE DAME,IN 46556

[2] UNIV NOTRE DAME,DEPT MAT SCI & ENGN,NOTRE DAME,IN 46556

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 12期

关键词：

D O I：

10.1063/1.338994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4878 / 4883

页数：6

共 19 条

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[10] GRAIN-GROWTH DURING TRANSIENT ANNEALING OF AS-IMPLANTED POLYCRYSTALLINE SILICON FILMS [J].

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