DIRECT EVIDENCE OF RECRYSTALLIZATION RATE ENHANCEMENT DURING RAPID THERMAL ANNEALING OF PHOSPHORUS AMORPHIZED SILICON LAYERS

被引：5

作者：

ADEKOYA, WO

ALI, MH

MULLER, JC

SIFFERT, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 24期

关键词：

D O I：

10.1063/1.97732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1736 / 1738

页数：3

相关论文

共 23 条

[1]

ADEKOYA WO, UNPUB

[2] INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH [J].

BLOOD, P ;

BROWN, WL ;

MILLER, GL .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :173-182

[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[4] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS [J].

CSEPREGI, L ;

KULLEN, RP ;

MAYER, JW ;

SIGMON, TW .

SOLID STATE COMMUNICATIONS, 1977, 21 (11) :1019-1021

[5] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[6] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

PHYSICS LETTERS A, 1975, 54 (02) :157-158

[7]

GROB JJ, UNPUB

[8] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

KENNEDY, EF ;

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246

[9] IMPURITY-INDUCED ENHANCEMENT OF THE GROWTH-RATE OF AMORPHIZED SILICON DURING SOLID-PHASE EPITAXY - A FREE-CARRIER EFFECT [J].

LICOPPE, C ;

NISSIM, YI .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :432-438

[10]

LICOPPE C, 1984, THESIS U PARIS 7