IMPURITY-INDUCED ENHANCEMENT OF THE GROWTH-RATE OF AMORPHIZED SILICON DURING SOLID-PHASE EPITAXY - A FREE-CARRIER EFFECT

被引：36

作者：

LICOPPE, C

NISSIM, YI

机构：

来源：

关键词：

D O I：

10.1063/1.336649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：432 / 438

页数：7

共 21 条

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