Optical properties of silicon nanoclusters fabricated by ion implantation

A method for the fabrication of luminescent Si nanoclusters in an amorphous SiO2 matrix by ion implantation is reported. We have measured the dose (concentration of excess Si atoms) and annealing time dependence of the photoluminescence of Si nanoclusters in SiO2 layers at room temperature. The samples were fabricated by ion implantation and subsequent annealing. After annealing, a photoluminescence band below 1.7 eV has been observed. The peak energy of the photoluminescence is found to be almost independent of annealing timer while the intensity of the luminescence increases as the annealing time increases. Moreover, we found that the peak energy of the luminescence is strongly affected by the dose of implanted Si ions, especially in the high-dose range. We also show direct evidence of widening of the band-gap energy of Si particles of a few nanometers in size by employing photoacoustic spectroscopy. These results indicate that the photons are absorbed by Si nanoclusters, for which the band-gap energy is modified by the quantum confinement effects, and the emission is not simply due to direct electron-hole recombination inside Si nanoclusters, but is related to defects probably at the interface between the Si nanoclusters and SiO2, for which the energy state is affected by cluster-cluster interactions. (C) 1998 American Institute of Physics. [S0021-8979(98)03411-2].