Planar multibarrier 80/240-GHz heterostructure barrier varactor triplers

被引:43
作者
Jones, JR
Bishop, WL
Jones, SH
Tait, GB
机构
[1] UNIV VIRGINIA,DEPT ELECT ENGN,CHARLOTTESVILLE,VA 22903
[2] US MIL ACAD,DEPT COMP SCI & ELECT ENGN,W POINT,NY 10996
基金
美国国家科学基金会;
关键词
frequency conversion; millimeter-wave diodes; semiconductor heterojunctions; varactors;
D O I
10.1109/22.566631
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Prototype planar four barrier GaAs/Al(0.7)Gao(0.3)As heterostructure barrier varactors (HBV's) for frequency tripling from 80 to 240 GHz have been fabricated using a process in which the device surface channnel is etched prior to the formation of the contact pad-to-anode air-bridge finger, Formation of the device air-bridge finger after etching the surface channel is facilitated by a trench planarization technique and yields a device with minimal parasitic capacitances, Planar four-barrier HBV triplers with nominal 10-mu m diameter anodes have been tested in a crossed-waveguide tripler block; as much as 2 mW of power has been generated at 252 GHz with a flange-to-flange tripling efficiency of 2.5%, These devices are the first planar or multibarrier HBV triplers reported and their output powers are nearly double that of previous whisker-contacted single-barrier HBV's.
引用
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页码:512 / 518
页数:7
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