Plasma-enhanced chemical vapor deposition of fluorocarbon films with high thermal resistance and low dielectric constants

被引：50

作者：

Takeishi, S ^{[1
]}

Kudo, H ^{[1
]}

Shinohara, R ^{[1
]}

Hoshino, M ^{[1
]}

Fukuyama, S ^{[1
]}

Yamaguchi, J ^{[1
]}

Yamada, M ^{[1
]}

机构：

[1] FUJITSU LABS LTD,INORGAN MAT & POLYMERS LAB,ATSUGI,KANAGAWA 24301,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 05期

关键词：

D O I：

10.1149/1.1837682

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Fluorocarbon films with low dielectric constants and high thermal resistance have been developed by plasma-enhanced chemical vapor deposition (PECVD) using gas mixtures of fluorocarbons (e.g., C4F8), hydrocarbons (e.g., C2H2), and/or hydrogen. A conventional parallel plate electrode PECVD system was used as the reactor. We report dielectric constants lower than 2.4 with these fluorinated films. The thermal of composition temperature was higher than 400 degrees C and the glass transition temperature (Tg) was also higher than 450 degrees C. This enables the use of organic films with very low dielectric constant in actual devices.

引用

页码：1797 / 1802

页数：6