Field emission properties of diamond films of different qualities

被引：48

作者：

Fox, NA ^{[1
]}

Wang, WN ^{[1
]}

Davis, TJ ^{[1
]}

Steeds, JW ^{[1
]}

May, PW ^{[1
]}

机构：

[1] UNIV BRISTOL,SCH CHEM,BRISTOL BS8 1TS,AVON,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 16期

关键词：

D O I：

10.1063/1.120024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field emission properties of diamond films were studied by macroscopic I-V measurement. A lower turn-on field and a higher emission current were observed for diamond films produced by higher methane concentration, or with higher density of defects, introduced by ion implantation. However, diamond films of poorer quality experience a severe reliability problem. Cold implantation followed by rapid thermal or laser annealing produced diamond emitters with a turn-on field as low as 5 V/mu m and the desired reliability. (C) 1997 American Institute of Physics.

引用

页码：2337 / 2339

页数：3

共 10 条

[1] Diamond emitters fabrication and theory
Geis, MW
Twichell, JC
Lyszczarz, TM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2060 - 2067
[2] ELECTRON FIELD-EMISSION FROM DIAMOND AND OTHER CARBON MATERIALS AFTER H-2, O-2 AND CS TREATMENT
GEIS, MW
TWICHELL, JC
MACAULAY, J
OKANO, K
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (09) : 1328 - 1330
[3] Groning O, 1996, APPL PHYS LETT, V69, P476, DOI 10.1063/1.118145
[4] CORRELATION BETWEEN BREAKDOWN VOLTAGE AND STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE AND HETEROEPITAXIAL CVD DIAMOND FILMS
HESSMER, R
SCHRECK, M
GEIER, S
STRITZKER, B
[J]. DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) : 951 - 956
[5] THEORETICAL-STUDY OF FIELD-EMISSION FROM DIAMOND
HUANG, ZH
CUTLER, PH
MISKOVSKY, NM
SULLIVAN, TE
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (20) : 2562 - 2564
[6] Growth and field emission properties of multiply twinned diamond films with quintuplet wedges
Wang, WN
Fox, NA
Davis, TJ
Richardson, D
Lynch, GM
Steeds, JW
Lee, JS
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (19) : 2825 - 2827
[7] COHERENTLY SCATTERED HOT-ELECTRONS EMITTED FROM MIM GRAPHITE MICROSTRUCTURES DEPOSITED ON BROAD-AREA VACUUM-INSULATED HIGH-VOLTAGE ELECTRODES
XU, NS
LATHAM, RV
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1986, 19 (03) : 477 - &
[8] ELECTRON FIELD-EMISSION FROM ION-IMPLANTED DIAMOND
ZHU, W
KOCHANSKI, G
JIN, S
SEIBLES, L
JACOBSON, DC
MCCORMACK, M
WHITE, AE
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (08) : 1157 - 1159
[9] Electron field emission from chemical vapor deposited diamond
Zhu, W
Kochanski, GP
Jin, S
Seibles, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2011 - 2019
[10] DEFECT-ENHANCED ELECTRON FIELD-EMISSION FROM CHEMICAL-VAPOR-DEPOSITED DIAMOND
ZHU, W
KOCHANSKI, GP
JIN, S
SEIBLES, L
[J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) : 2707 - 2711

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