ELECTRON FIELD-EMISSION FROM ION-IMPLANTED DIAMOND

Diamond films and islands grown by chemical vapor deposition were implanted with boron, sodium, and carbon ions at doses of 10(14)-10(15)/cm(2). This structural modification at the subsurface resulted in a significant reduction of the electric field required for electron emission. The threshold field for producing a current density of 10 mA/cm(2) can be as low as 42 V/mu m for the as-implanted diamond compared to 164 V/mu m for the high quality p-type diamond. When the ion-implanted samples were annealed at high temperatures in order to anneal out the implantation-induced defects, the low-field electron emission capability of diamond disappeared. These results further confirm our earlier findings about the role of defects in the electron emission from undoped or p-type doped diamond and indicate that the improved emission characteristics of as-implanted diamond is due to the defects created by the ion implantation process. (C) 1995 American Institute of Physics.