Chemical approach to the realization of electronic devices in epitaxial graphene

被引：38

作者：

Bekyarova, Elena

Itkis, Mikhail E.

Ramesh, Palanisamy

Haddon, Robert C. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Chem, Ctr Nanoscale Sci & Engn, Riverside, CA 92521 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2009年 / 3卷 / 06期

基金：

美国国家科学基金会;

关键词：

WALLED CARBON NANOTUBES; ARYL GROUPS; HYDROGENATION; GRAPHITE;

D O I：

10.1002/pssr.200903110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have shown that nitrophenyl groups may be added to the surface of few-layer epitaxial graphene (EG) by the formation of covalent carbon-carbon bonds thereby changing the electronic structure and transport properties of EG from near-metallic to semiconducting. In the present Letter we discuss the opportunities afforded by such chemical processes to engineer device functionality in graphene by modification of the electronic properties without physical patterning. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim

引用

页码：184 / 186

页数：3

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