Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)

被引：34

作者：

Chien, CL ^{[1
]}

Yang, FY

Liu, K

Reich, DH

Searson, PC

机构：

[1] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA

[2] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.373123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-crystal bismuth thin films, fabricated by electrodeposition and suitable annealing, exhibit very large magnetoresistance of 400 000% at 5 K and 300% at 300 K, as well as pronounced Shubnikov-de Haas oscillations. A hybrid structure demonstrates the potential for field sensing with sensitivities of 35%/Oe at 5 K and 0.2%/Oe at 300 K. (C) 2000 American Institute of Physics. [S0021- 8979(00)25508-4].

引用

页码：4659 / 4664

页数：6

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