Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions

被引:219
作者
Nozaki, T. [1 ,2 ]
Shiota, Y. [1 ]
Shiraishi, M. [1 ]
Shinjo, T. [1 ]
Suzuki, Y. [1 ]
机构
[1] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan
[2] JST, PRESTO, Kawaguchi, Saitama 3320012, Japan
关键词
cobalt alloys; ferromagnetic resonance; gold; iron alloys; magnesium compounds; magnetic epitaxial layers; magnetic multilayers; magnetic tunnelling; magnetoelectric effects; perpendicular magnetic anisotropy; surface magnetism; ELECTRIC-FIELD CONTROL; SPIN-TRANSFER-TORQUE; ROOM-TEMPERATURE; MAGNETORESISTANCE; FERROMAGNETISM; MANIPULATION; VECTOR; FILM;
D O I
10.1063/1.3279157
中图分类号
O59 [应用物理学];
学科分类号
摘要
A voltage-induced perpendicular magnetic anisotropy change in an ultrathin FeCo layer was observed in an epitaxial magnetic tunnel junction (MTJ) structure. A spin-transfer induced ferromagnetic resonance measurement technique was used under various bias voltage applications to evaluate the anisotropy change. From the peak frequency shifts, we could estimate that a surface magnetic anisotropy change of 15 mu J/m(2) was induced by an electric field application of 400 mV/nm in the MTJ with a 0.5 nm thick FeCo layer. The realization of voltage-induced anisotropy changes in an MTJ structure should have a large impact on the development of electric-field driven spintronic devices.
引用
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页数:3
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