Electrical properties of ferroelectric-capacitor-gate Si MOS transistors using P(L)ZT films

被引：6

作者：

Tokumitsu, E

Shimamura, T

Ishiwara, H

机构：

[1] Prec. and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama 226

来源：

INTEGRATED FERROELECTRICS | 1997年 / 15卷 / 1-4期

关键词：

D O I：

10.1080/10584589708015704

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A ferroelectric-capacitor-gate Si MOSFET which consists of an SiO2/Si MOSFET and a ferroelectric capacitor has been demonstrated. It is shown that memory functions can be obtained by connecting the ferroelectric capacitor with the gate of MOSFETs. The operation of such devices is similar to that of metal-ferroelectric-semiconductor (MFS) FETs. The large memory window or threshold voltage shift can be obtained with a ferroelectric capacitor which has a large coercive voltage. The memory effect of the device has been demonstrated by showing the drain current change by a previously applied ''write'' pulse at a fixed gate voltage of 0V.

引用

页码：137 / 144

页数：8

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