Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities

The authors report ultrahigh mobility nanocrystalline silicon thin-film transistors directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150 degrees C. The transistors show maximum effective field effect mobilities of 450 cm(2)/V s for electrons and 100 cm(2)/V s for holes at room temperature. The authors argue that the key factor in their results is the reduction of the oxygen content, which acts as an accidental donor. (c) 2006 American Institute of Physics.