Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells

被引：47

作者：

Larcher, L ^{[1
]}

Verzellesi, G

Pavan, P

Lusky, E

Bloom, I

Eitan, B

机构：

[1] Univ Modena, Dipartimento Sci Metodi Ingn, I-42100 Modena, Italy

[2] Univ Modena, INFM, I-42100 Modena, Italy

[3] Univ Modena, Dipartimento Ingn Infomaz, I-42100 Modena, Italy

[4] Saifun Semicond, IL-42504 Netanya, Israel

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 11期

关键词：

device simulations; flash memories; semiconductor device reliability; semiconductor memories;

D O I：

10.1109/TED.2002.804726

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this paper is to achieve a correct description of programming charge distribution in NROM memory devices. This is essential to prove device functionality and to extrapolate scaling limits of devices. To this purpose we use an inverse modeling based methodology using measurements easily performed, such as subthreshold characteristics and threshold voltage measurements. We will show a simple model of programming charge distribution that can be easily implemented in two-dimensional (2-D) TCAD simulations. Results show good agreement between measured and simulated currents under different bias conditions and for different programming levels.

引用

页码：1939 / 1946

页数：8

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