LATERAL DISTRIBUTION OF HOT-CARRIER-INDUCED INTERFACE TRAPS IN MOSFETS

[1] ELECTRIC-FIELD INDUCED EFFECTS AT THE SI-SIO2 INTERFACE - THEORY AND EXPERIMENT [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5231 - 5239

[2] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94

[3] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 42 - 53

[4] TWO-DIMENSIONAL MODELING OF LOCALLY DAMAGED SHORT-CHANNEL MOSFETS OPERATING IN THE LINEAR REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 378 - 385

[5] HOT-ELECTRON AND HOLE-EMISSION EFFECTS IN SHORT N-CHANNEL MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 691 - 699

[6] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[7] DETERMINATION OF SPATIAL SURFACE-STATE DENSITY DISTRIBUTION IN MOS AND SIMOS TRANSISTORS AFTER CHANNEL HOT-ELECTRON INJECTION [J]. ELECTRONICS LETTERS, 1982, 18 (09) : 372 - 374

[8] Poorter T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P100

[9] PROBING OF IMPURITY POTENTIAL WELL AT THE SI/SIO2 INTERFACE BY ELECTRIC-FIELD-ENHANCED EMISSION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2823 - 2829

[10] OBSERVATION OF HOT-HOLE INJECTION IN NMOS TRANSISTORS USING A MODIFIED FLOATING-GATE TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1529 - 1534

[1] ELECTRIC-FIELD INDUCED EFFECTS AT THE SI-SIO2 INTERFACE - THEORY AND EXPERIMENT [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5231 - 5239

[2] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94

[3] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 42 - 53

[4] TWO-DIMENSIONAL MODELING OF LOCALLY DAMAGED SHORT-CHANNEL MOSFETS OPERATING IN THE LINEAR REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 378 - 385

[5] HOT-ELECTRON AND HOLE-EMISSION EFFECTS IN SHORT N-CHANNEL MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 691 - 699

[6] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[7] DETERMINATION OF SPATIAL SURFACE-STATE DENSITY DISTRIBUTION IN MOS AND SIMOS TRANSISTORS AFTER CHANNEL HOT-ELECTRON INJECTION [J]. ELECTRONICS LETTERS, 1982, 18 (09) : 372 - 374

[8] Poorter T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P100

[9] PROBING OF IMPURITY POTENTIAL WELL AT THE SI/SIO2 INTERFACE BY ELECTRIC-FIELD-ENHANCED EMISSION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2823 - 2829

[10] OBSERVATION OF HOT-HOLE INJECTION IN NMOS TRANSISTORS USING A MODIFIED FLOATING-GATE TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1529 - 1534