ELECTRIC-FIELD INDUCED EFFECTS AT THE SI-SIO2 INTERFACE - THEORY AND EXPERIMENT

被引：4

作者：

ANCONA, MG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5231 / 5239

页数：9

共 13 条

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