FULLY MACROSCOPIC DESCRIPTION OF ELECTRICAL-CONDUCTION IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES

被引：11

作者：

ANCONA, MG ^{[1
]}

TIERSTEN, HF ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT MECH ENGN AERONAUT ENGN & MECH,TROY,NY 12181

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.27.7018

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7018 / 7045

页数：28

共 27 条

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EATON, DH
SAH, CT
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[6] ERINGEN AC, 1967, MECHANICS CONTINUA
[7] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
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DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[9] GROVE AS, 1967, PHYSICS TECHNOLOGY S, P238
[10] PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER
HOFSTEIN, SR
WARFIELD, G
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 321 - +