Domain reversal and relaxation in LiNbO3 single crystals studied by piezoresponse force microscope

被引:27
作者
Kan, Yi [1 ]
Lu, Xiaomei [1 ]
Wu, Xiumei [1 ]
Zhu, Jinsong [1 ]
机构
[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2425034
中图分类号
O59 [应用物理学];
学科分类号
摘要
The LiNbO3 crystal was polarized and characterized by the piezoresponse force mode of scanning probe microscope. By using the Kolmogorov-Avrami-Ishibashi [Izv. Akad. Nauk, USSR: Ser. Math. 3, 355 (1937); J. Chem. Phys. 8, 212 (1940); J. Phys. Soc. Jpn. 63, 1031 (1994); 63, 1601 (1994)] theory to analyze the relaxation process after domain switching, it was found that (1) the percent of final switched domains after poling increased with the enhancing poling voltage, (2) the nucleation time was a constant to a certain sample, (3) the dimension of domain growth decreased with the enhancing poling voltage, and (4) the relaxation time had a maximum at a medial voltage. The corresponding mechanism for domain switching was discussed, which is hopefully useful for domain engineering. (c) 2006 American Institute of Physics.
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页数:3
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共 25 条
[1]  
Avrami M., 1940, J CHEM PHYS, V8, P212, DOI [10.1063/1.1750631, DOI 10.1063/1.1750631]
[2]   Ferroelectric domain switching in tri-glycine sulphate and barium-titanate bulk single crystals by scanning force microscopy [J].
Eng, LM ;
Abplanalp, M ;
Guner, P .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S679-S683
[3]   QUASI-PHASE-MATCHED 2ND HARMONIC-GENERATION - TUNING AND TOLERANCES [J].
FEJER, MM ;
MAGEL, GA ;
JUNDT, DH ;
BYER, RL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (11) :2631-2654
[4]   Modeling and measurement of surface displacements in BaTiO3 bulk material in piezoresponse force microscopy [J].
Felten, F ;
Schneider, GA ;
Saldaña, JM ;
Kalinin, SV .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :563-568
[5]   Domain nucleation and relaxation kinetics in ferroelectric thin films [J].
Ganpule, CS ;
Nagarajan, V ;
Ogale, SB ;
Roytburd, AL ;
Williams, ED ;
Ramesh, R .
APPLIED PHYSICS LETTERS, 2000, 77 (20) :3275-3277
[6]   Polarization relaxation kinetics and 180° domain wall dynamics in ferroelectric thin films -: art. no. 014101 [J].
Ganpule, CS ;
Roytburd, AL ;
Nagarajan, V ;
Hill, BK ;
Ogale, SB ;
Williams, ED ;
Ramesh, R ;
Scott, JF .
PHYSICAL REVIEW B, 2002, 65 (01) :1-7
[7]   Direct studies of domain switching dynamics in thin film ferroelectric capacitors [J].
Gruverman, A ;
Rodriguez, BJ ;
Dehoff, C ;
Waldrep, JD ;
Kingon, AI ;
Nemanich, RJ ;
Cross, JS .
APPLIED PHYSICS LETTERS, 2005, 87 (08)
[8]   Scanning force microscopy of domain structure in ferroelectric thin films: imaging and control [J].
Gruverman, A ;
Auciello, O ;
Ramesh, R ;
Tokumoto, H .
NANOTECHNOLOGY, 1997, 8 :A38-A43
[9]   Scanning force microscopy studies of domain structure in BaTiO3 single crystals [J].
Gruverman, AL ;
Hatano, J ;
Tokumoto, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (4A) :2207-2211
[10]   STUDY OF D-E HYSTERESIS LOOP OF TGS BASED ON THE AVRAMI-TYPE MODEL [J].
HASHIMOTO, S ;
ORIHARA, H ;
ISHIBASHI, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1994, 63 (04) :1601-1610