Polarization relaxation kinetics and 180° domain wall dynamics in ferroelectric thin films -: art. no. 014101

被引:169
作者
Ganpule, CS [1 ]
Roytburd, AL
Nagarajan, V
Hill, BK
Ogale, SB
Williams, ED
Ramesh, R
Scott, JF
机构
[1] Univ Maryland, Mat Res Sci & Engn Ctr, College Pk, MD 20742 USA
[2] Univ Cambridge, Dept Earth Sci, Symetrix Ctr Ferro, Cambridge CB2 3EQ, England
来源
PHYSICAL REVIEW B | 2002年 / 65卷 / 01期
关键词
D O I
10.1103/PhysRevB.65.014101
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The time-dependent relaxation of remanant polarization in epitaxial lead zirconate titanate [Pb(Zr0.2Ti0.8)O-3,PZT] ferroelectric thin films. containing a uniform two-dimensional grid of 90degrees domains (c axis in the plane of the film), is examined using voltage-modulated scanning force microscopy, 90degrees domain walls preferentially nucleate 180degrees reverse domains during relaxation, which grow and coalesce as a function of relaxation time. Relaxation is seen to saturate at different levels depending on the write voltage. Late (saturation) stages of relaxation are accompanied by pinning and faceting of the domain walls (drastically reducing the wall mobility), which is direct evidence of the role of defect sites and crystallographic features on polarization relaxation. The kinetics of relaxation is modeled through the nucleation and growth Johnson-Kolmogorov theory with a decreasing driving force.
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页码:1 / 7
页数:7
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