175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes

被引：117

作者：

Tezuka, N.

Ikeda, N.

Sugimoto, S.

Inomata, K.

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan

[2] JST, CREST, Saitama 3320012, Japan

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 25期

关键词：

JUNCTIONS;

D O I：

10.1063/1.2420793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have fabricated epitaxially grown spin-valve-type magnetic tunnel junctions with L2(1)-Co2FeAl0.5Si0.5 full-Heusler alloys for top and bottom electrodes and a MgO barrier. For MgO thickness t(MgO)=1.5 nm, tunnel magnetoresistance (TMR) ratio and resistance and area product (RA) initially increase up to around 350 degrees C and then decrease by annealing, while for t(MgO)=2.0 and 2.5 nm, the TMR ratio increases with annealing temperature and peaks around 500 degrees C. The TMR ratio up to 175% at RT and thermal stability up to 500 degrees C have been achieved for t(MgO)=2.0 nm, suggesting the large tunneling spin polarization and high thermal stability for Co2FeAl0.5Si0.5 with L2(1) structure. (c) 2006 American Institute of Physics.

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页数：3

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