Magnetoresistance in Hybrid Organic Spin Valves at the Onset of Multiple-Step Tunneling

被引：83

作者：

Schoonus, J. J. H. M. ^{[1
]}

Lumens, P. G. E. ^{[1
]}

Wagemans, W. ^{[1
]}

Kohlhepp, J. T. ^{[1
]}

Bobbert, P. A. ^{[1
]}

Swagten, H. J. M. ^{[1
]}

Koopmans, B. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, cNM, NL-5600 MB Eindhoven, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 14期

关键词：

SEMICONDUCTOR; INJECTION;

D O I：

10.1103/PhysRevLett.103.146601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al(2)O(3)(1.5 nm)/tris(8-hydroxyquinoline)aluminium (Alq(3))/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of magnetoresistance at the onset of multiple-step tunneling. In the regime of multiple-step tunneling, under the condition of low hopping rates, spin precession in the presence of hyperfine coupling is conjectured to be the relevant source of spin relaxation. A quantitative analysis leads to the prediction of a symmetric magnetoresistance around zero magnetic field in addition to the hysteretic magnetoresistance curves, which are indeed observed in our experiments.

引用

页数：4

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