Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy

被引：24

作者：

Cantoro, M. ^{[1
,2
]}

Brammertz, G. ^{[1
]}

Richard, O. ^{[1
]}

Bender, H. ^{[1
]}

Clemente, F. ^{[1
]}

Leys, M. ^{[1
]}

Degroote, S. ^{[1
]}

Caymax, M. ^{[1
]}

Heyns, M. ^{[1
,3
]}

De Gendt, S. ^{[1
,4
]}

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2009年 / 156卷 / 11期

关键词：

SEMICONDUCTOR NANOWIRES; OPTICAL-PROPERTIES; TWINNING SUPERLATTICES; SILICON NANOWIRES; INDIUM ARSENIDE; V NANOWIRES; INAS; GAAS; SI; HETEROSTRUCTURES;

D O I：

10.1149/1.3222852

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report on the growth of surface-bound, vertically oriented one-dimensional III/V nanostructures, specifically GaAs and InAs nanowires, on lattice-matched and -mismatched substrates by selective-area vapor-phase epitaxy. Control of nanowire features and growth directions is achieved by tuning the growth conditions. Grown nanostructures are characterized by scanning and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. (C) 2009 The Electrochemical Society. [DOI:10.1149/1.3222852] All rights reserved.

引用

页码：H860 / H868

页数：9

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