Exciton spectral splitting near room temperature from high contrast semiconductor microcavities

被引：9

作者：

Graham, LA

Deng, Q

Deppe, DG

Huffaker, DL

机构：

[1] Microelectronics Research Center, Dept. of Elec. and Comp. Engineering, University of Texas at Austin, Austin

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 07期

关键词：

D O I：

10.1063/1.118231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectral splitting due to the exciton response of a three InGaAs quantum well active region placed in various high contrast semiconductor microcavities is observed near room temperature. The planar microcavities consist of one-wavelength thick cavity spacers surrounded by AlGaAs/CaAs along with high contrast distributed Bragg reflectors formed from AlxOy/GaAs and MgF/ZnSe. Microcavities having different loss rates are characterized over a range of temperatures using reflectance, transmission, and photoluminescence. (C) 1997 American Institute of Physics.

引用

页码：814 / 816

页数：3

共 14 条

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