Exciton spectral splitting near room temperature from high contrast semiconductor microcavities

被引:9
作者
Graham, LA
Deng, Q
Deppe, DG
Huffaker, DL
机构
[1] Microelectronics Research Center, Dept. of Elec. and Comp. Engineering, University of Texas at Austin, Austin
关键词
D O I
10.1063/1.118231
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spectral splitting due to the exciton response of a three InGaAs quantum well active region placed in various high contrast semiconductor microcavities is observed near room temperature. The planar microcavities consist of one-wavelength thick cavity spacers surrounded by AlGaAs/CaAs along with high contrast distributed Bragg reflectors formed from AlxOy/GaAs and MgF/ZnSe. Microcavities having different loss rates are characterized over a range of temperatures using reflectance, transmission, and photoluminescence. (C) 1997 American Institute of Physics.
引用
收藏
页码:814 / 816
页数:3
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