Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors

被引：34

作者：

Nelson, TR

Prineas, JP

Khitrova, G

Gibbs, HM

Berger, JD

Lindmark, EK

Shin, JH

Shin, HE

Lee, YH

Tayebati, P

Javniskis, L

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

[2] CORETEK INC,BEDFORD,MA 01730

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 20期

关键词：

D O I：

10.1063/1.116829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A GaAs/AlAs microcavity containing six InGaAs quantum wells was grown, and the sample was then etched via chemically-assisted ion-beam etching to form 50-mu m-diam cylindrical mesas, The formation of native oxides, accomplished by baking the samples at 400 degrees C in the presence of a pressurized N-2/H2O Vapor line, lowered the refractive index of the AlAs layers to 1.5. The higher refractive index contrast more effectively confined the intracavity held, leading to well-resolved reflectivity dips with an exciton-polariton splitting of 6.72 nm=9.44 meV at room temperature. (C) 1996 American Institute of Physics.

引用

收藏

页码：3031 / 3033

页数：3

相关论文

共 20 条

[1] Magnetic-field enhancement of the exciton-polariton splitting in a semiconductor quantum-well microcavity: The strong coupling threshold [J].

Berger, JD ;

Lyngnes, O ;

Gibbs, HM ;

Khitrova, G ;

Nelson, TR ;

Lindmark, EK ;

Kavokin, AV ;

Kaliteevski, MA ;

Zapasskii, VV .

PHYSICAL REVIEW B, 1996, 54 (03) :1975-1981

[2] OBSERVATION OF DRESSED-EXCITON OSCILLATING EMISSION OVER A WIDE WAVELENGTH RANGE IN A SEMICONDUCTOR MICROCAVITY [J].

CAO, H ;

JACOBSON, J ;

BJORK, G ;

PAU, S ;

YAMAMOTO, Y .

APPLIED PHYSICS LETTERS, 1995, 66 (09) :1107-1109

[3] CAVITY CHARACTERISTICS OF SELECTIVELY OXIDIZED VERTICAL-CAVITY LASERS [J].

CHOQUETTE, KD ;

LEAR, KL ;

SCHNEIDER, RP ;

GEIB, KM .

APPLIED PHYSICS LETTERS, 1995, 66 (25) :3413-3415

[4] POSITION-DEPENDENT EXCITON-PHOTON MODE SPLITTING IN A MICROCAVITY [J].

FREY, A ;

JUNGK, G ;

HEY, R .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2214-2216

[5] ROOM-TEMPERATURE CAVITY POLARITONS IN A SEMICONDUCTOR MICROCAVITY [J].

HOUDRE, R ;

STANLEY, RP ;

OESTERLE, U ;

ILEGEMS, M ;

WEISBUCH, C .

PHYSICAL REVIEW B, 1994, 49 (23) :16761-16764

[6] SATURATION OF THE STRONG-COUPLING REGIME IN A SEMICONDUCTOR MICROCAVITY - FREE-CARRIER BLEACHING OF CAVITY POLARITONS [J].

HOUDRE, R ;

GIBERNON, JL ;

PELLANDINI, P ;

STANLEY, RP ;

OESTERLE, U ;

WEISBUCH, C ;

OGORMAN, J ;

ROYCROFT, B ;

ILEGEMS, M .

PHYSICAL REVIEW B, 1995, 52 (11) :7810-7813

[7]

HOUDRE R, 1994, PHYS REV LETT, V73, P2044

[8] OBSERVATION OF EXCITON-POLARITON OSCILLATING EMISSION IN A SINGLE-QUANTUM-WELL SEMICONDUCTOR MICROCAVITY [J].

JACOBSON, J ;

PAU, S ;

CAO, H ;

BJORK, G ;

YAMAMOTO, Y .

PHYSICAL REVIEW A, 1995, 51 (03) :2542-2544

[9] OPTICAL-CONSTANTS OF ALXGA1-XAS [J].

JENKINS, DW .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) :1848-1853

[10] EXCITONS IN A II-VI SEMICONDUCTOR MICROCAVITY IN THE STRONG-COUPLING REGIME [J].

KELKAR, P ;

KOZLOV, V ;

JEON, H ;

NURMIKKO, AV ;

CHU, CC ;

GRILLO, DC ;

HAN, J ;

HUA, CG ;

GUNSHOR, RL .

PHYSICAL REVIEW B, 1995, 52 (08) :R5491-R5494