Preparation of SnS films by low temperature sulfurization

被引：22

作者：

Minemura, Takehiro ^{[1
]}

Miyauchi, Keisuke ^{[1
]}

Noguchi, Koji ^{[1
]}

Ohtsuka, Kenichi ^{[1
]}

Nakanishi, Hisayuki ^{[1
]}

Sugiyama, Mutsumi ^{[1
]}

机构：

[1] Tokyo Univ Sci, Fac Sci & Technol, Dept Elect Engn, Noda, Chiba 2788510, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 5 | 2009年 / 6卷 / 05期

关键词：

BAND-STRUCTURE; THIN-FILMS; SPECTRA; CELLS;

D O I：

10.1002/pssc.200881166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline tin sulfide (SnS) films were grown by sulfurization of Sri precursor at low temperatures of 120-220 degrees C. The p-type conductivity SnS film grown at 170 degrees C comprises densely packed 3-5-mu m-diameter columnar grains, which is appropriate for use in photoabsorption layers of solar cells. The SnS film had an optical bandgap of about 1.3 eV. Using an appropriate SnS film, n-CdS/p-SnS heterojunction was fabricated on Mo-coated soda-lime glass substrates. These results are the first step toward realizing an optical device as a solar cell using a SnS film grown using sulfurization. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1221 / 1224

页数：4

共 11 条

[1] SEMI-CONDUCTING PROPERTIES OF STANNOUS SULPHIDE [J].

ANDERSON, JS ;

MORTON, MC .

NATURE, 1945, 155 (3926) :112-112

[2] Thickness effect on the physical properties of evaporated SnS films [J].

Devika, M. ;

Reddy, N. Koteeswara ;

Ramesh, K. ;

Ganesan, R. ;

Gunasekhar, K. R. ;

Gopal, E. S. R. ;

Reddy, K. T. Ramakrishna .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (02) :H67-H73

[3] ELECTRONIC-STRUCTURE OF SNS DEDUCED FROM PHOTOELECTRON-SPECTRA AND BAND-STRUCTURE CALCULATIONS [J].

ETTEMA, ARHF ;

DEGROOT, RA ;

HAAS, C ;

TURNER, TS .

PHYSICAL REVIEW B, 1992, 46 (12) :7363-7373

[4] Cathodic electrodeposition of SnS in the presence of EDTA in aqueous media [J].

Ghazali, A ;

Zainal, Z ;

Hussein, MZ ;

Kassim, A .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1998, 55 (03) :237-249

[5] Photovoltaic cells based on pulsed electrochemically deposited SnS and photochemically deposited US and Cd1-xZnxS [J].

Gunasekaran, M. ;

Ichimura, M. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2007, 91 (09) :774-778

[6] PREPARATION AND CHARACTERIZATION OF CHEMICALLY DEPOSITED TIN(II) SULFIDE THIN-FILMS [J].

PRAMANIK, P ;

BASU, PK ;

BISWAS, S .

THIN SOLID FILMS, 1987, 150 (2-3) :269-276

[7] Photovoltaic properties of SnS based solar cells [J].

Reddy, K. T. Ramakrishna ;

Reddy, N. Koteswara ;

Miles, R. W. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (18-19) :3041-3046

[8] Formation of polycrystalline SnS layers by a two-step process [J].

Reddy, KTR ;

Reddy, PP ;

Datta, R ;

Miles, RW .

THIN SOLID FILMS, 2002, 403 :116-119

[9] Growth of single-phase CuInGaSe2 photo-absorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source [J].

Sugiyama, M. ;

Kinoshita, A. ;

Fukaya, M. ;

Nakanishi, H. ;

Chichibu, S. F. .

THIN SOLID FILMS, 2007, 515 (15) :5867-5870

[10] Optical and photoconductive properties of SnS thin films prepared by electron beam evaporation [J].

Tanusevski, A ;

Poelman, D .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 80 (03) :297-303

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