Growth of single-phase CuInGaSe2 photo-absorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source

被引：24

作者：

Sugiyama, M.

Kinoshita, A.

Fukaya, M.

Nakanishi, H.

Chichibu, S. F.

机构：

[1] Tokyo Univ Sci, Dept Elect Engn, Noda, Chiba 2788510, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[3] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 15期

关键词：

D O I：

10.1016/j.tsf.2006.12.061

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Selenization growth of purely single-phase, polyerystalline CuIn1 -xGaxSe2 (0 <= x <= 1) alloy films was demonstrated using a less-hazardous metalorganic selenide, diethylselenide [(C2H5)(2)Se: DESe], without additional thermal annealing. Approximately 2.0-mu m-thick films of the alloys exhibited X-ray diffraction peaks originating exclusively from the chalcopyrite structure. Low temperature photoluminescence spectra of the alloy films were dominated by a couple of characteristic donor-acceptor pair emissions that are particular to the state-of-the-art CuInGaSe2, photo-absorbing layers. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：5867 / 5870

页数：4

共 21 条

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