Results of the project "silicon for mass unit and standard" (SIMUS)

被引:1
作者
Alasia, F [1 ]
Basile, G [1 ]
D'Agostino, G [1 ]
Peuto, A [1 ]
Pettorruso, S [1 ]
Becker, P [1 ]
Bettin, H [1 ]
Kuetgens, U [1 ]
Stuempel, J [1 ]
Valkiers, S [1 ]
Taylor, P [1 ]
De Biévre, P [1 ]
Jensen, L [1 ]
Servidori, M [1 ]
Spirito, P [1 ]
Zeni, L [1 ]
Amato, G [1 ]
Riemann, H [1 ]
Haertwig, J [1 ]
Von Ammon, W [1 ]
机构
[1] CNR, Ist Metrol G Colonnnetti, I-10135 Turin, Italy
来源
2002 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS, CONFERENCE DIGEST | 2002年
关键词
D O I
10.1109/CPEM.2002.1034969
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The structural and stoichiometric characterisations of Silicon crystals are reported to find the origin of a molar volume discrepancy. The target of reproducing this anomaly was achieved and an hypothesis is proposed.
引用
收藏
页码:558 / 559
页数:2
相关论文
共 4 条
[1]  
Alasia F, 2001, IEEE T INSTRUM MEAS, V50, P608, DOI 10.1109/19.918203
[2]  
BECKER P, UNPUB CPEM 2002
[3]  
BETTIN H, UNPUB CPEM 2002
[4]   The molar volume of silicon [J].
DeBievre, P ;
Valkiers, S ;
Gonfiantini, R ;
Taylor, PDP ;
Bettin, H ;
Spieweck, F ;
Peuto, A ;
Pettorruso, S ;
Mosca, M ;
Fujii, K ;
Tanaka, M ;
Nezu, Y ;
Leistner, AJ ;
Giardini, WJ .
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1997, 46 (02) :592-595