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High-efficiency electrophosphorescent organic light-emitting diodes with double light-emitting layers
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作者:

Zhou, X
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Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

Qin, DS
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机构: Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

Pfeiffer, M
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机构: Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

Blochwitz-Nimoth, J
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机构: Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

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Drechsel, J
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机构: Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

Maennig, B
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机构: Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

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Bold, M
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机构: Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

Erk, P
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机构: Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

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机构:
[1] Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany
[2] BASF AG, Performance Chem Res, D-67056 Ludwigshafen, Germany
[3] FH Merseburg, FB CHem & Umweltingenieurwesen, D-06217 Merseburg, Germany
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D O I:
10.1063/1.1522495
中图分类号:
O59 [应用物理学];
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摘要:
We demonstrate high-efficiency electrophosphorescent organic light-emitting diodes (PHOLEDs) with double light-emitting layers (D-EMLs) by doping both hole and electron transport hosts with fac tris(2-phenylpyridine)iridium [Ir(ppy)(3)] simultaneously. The D-EMLs PHOLEDs show significantly improved efficiency (peak external quantum efficiency of about 12.6%, corresponding to a current efficiency of 44.3 cd/A) compared to the conventional PHOLEDs with a single EML and either hole or electron transport host doped with Ir(ppy)(3). We attribute this improvement mainly to reduced losses of triplet excitons into regions that are not doped by phosphorescent emitter molecules. (C) 2002 American Institute of Physics.
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页码:4070 / 4072
页数:3
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