Time-resolved photoluminescence of all-porous-silicon microcavities

被引:33
作者
Cazzanelli, M
Pavesi, L
机构
[1] Ist Nazl Fis Mat, I-38050 Povo, TN, Italy
[2] Trent Univ, Dipartimento Fis, I-38050 Povo, TN, Italy
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 23期
关键词
D O I
10.1103/PhysRevB.56.15264
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The emission property of a porous silicon layer placed in an optical microcavity is investigated by photoluminescence and time-resolved photoluminescence measurements. The microcavity is formed by an all-porous-silicon Fabry-Perot filter made by two distributed Bragg reflectors separated by a lambda or lambda/2 porous silicon layer. The main findings are that the spontaneous emission spectrum is drastically modified: the linewidth is narrowed, the time decay of the emission is shortened by a factor of about 2/3 at room temperature, and the peak emission intensity is increased by a factor of more than 10. These facts are caused by the redistribution of the optical modes in the cavity due to the presence of the optical resonator and to the variations in the dielectric environment where the radiative emission takes place.
引用
收藏
页码:15264 / 15271
页数:8
相关论文
共 21 条
  • [1] [Anonymous], ADV SOLID STATE PHYS
  • [2] Controlled electroluminescence spectra of porous silicon diodes with a vertical optical cavity
    Araki, M
    Koyama, H
    Koshida, N
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (20) : 2956 - 2958
  • [3] ANALYTIC EXPRESSIONS FOR THE REFLECTION DELAY, PENETRATION DEPTH, AND ABSORPTANCE OF QUARTER-WAVE DIELECTRIC MIRRORS
    BABIC, DI
    CORZINE, SW
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (02) : 514 - 524
  • [4] Bebb H.B., 1972, Semiconductors and Semimetals, V8, P181, DOI DOI 10.1016/S0080-8784(08)62345-5
  • [5] INVESTIGATION AND DESIGN OF OPTICAL-PROPERTIES OF POROSITY SUPERLATTICES
    BERGER, MG
    THONISSEN, M
    ARENSFISCHER, R
    MUNDER, H
    LUTH, H
    ARNTZEN, M
    THEISS, W
    [J]. THIN SOLID FILMS, 1995, 255 (1-2) : 313 - 316
  • [6] POROSITY SUPERLATTICES - A NEW CLASS OF SI HETEROSTRUCTURES
    BERGER, MG
    DIEKER, C
    THONISSEN, M
    VESCAN, L
    LUTH, H
    MUNDER, H
    THEISS, W
    WERNKE, M
    GROSSE, P
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (06) : 1333 - 1336
  • [7] BJORK G, 1995, SPONTANEOUS EMISSION, P189
  • [8] Porous silicon: From luminescence to LEDs
    Collins, RT
    Fauchet, PM
    Tischler, MA
    [J]. PHYSICS TODAY, 1997, 50 (01) : 24 - 31
  • [9] Silicon-based visible light-emitting devices integrated into microelectronic circuits
    Hirschman, KD
    Tsybeskov, L
    Duttagupta, SP
    Fauchet, PM
    [J]. NATURE, 1996, 384 (6607) : 338 - 341
  • [10] POROUS SILICON ELECTROLUMINESCENT DEVICES
    LANG, W
    STEINER, P
    KOZLOWSKI, F
    [J]. JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) : 341 - 349