Graphene Synthesis on Cubic SiC/Si Wafers. Perspectives for Mass Production of Graphene-Based Electronic Devices

被引:156
作者
Aristov, Victor Yu. [1 ,2 ]
Urbanik, Grzegorz [1 ]
Kummer, Kurt [3 ]
Vyalikh, Denis V. [3 ]
Molodtsova, Olga V. [1 ]
Preobrajenski, Alexei B. [4 ]
Zakharov, Alexei A. [4 ]
Hess, Christian [1 ]
Haenke, Torben [1 ]
Buechner, Bernd [1 ]
Vobornik, Ivana [5 ]
Fujii, Jun [5 ]
Panaccione, Giancarlo [5 ]
Ossipyan, Yuri A. [2 ]
Knupfer, Martin [1 ]
机构
[1] Leibniz Inst Solid State & Mat Res, D-01069 Dresden, Germany
[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
[3] Tech Univ Dresden, Inst Solid State Phys, D-01062 Dresden, Germany
[4] Lund Univ, Max Lab, S-22100 Lund, Sweden
[5] CNRS, INFM, TASC Natl Lab, I-34012 Trieste, Italy
关键词
Graphene layer; synthesis; cubic SIC surface; BANDGAP;
D O I
10.1021/nl904115h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The outstanding properties of graphene, a single graphite layer, render it a top candidate for substituting silicon in future electronic devices, The so far exploited synthesis approaches, however, require conditions typically achieved in specialized laboratories and result in graphene sheets whose electronic properties are often altered by interactions with substrate materials. The development of graphene-based technologies requires an economical fabrication method compatible with mass production. Here we demonstrate for the fist Lime the feasibility of graphene synthesis on commercially available cubic SiC/Si substrates of >300 mm in diameter, which result in graphene flakes electronically decoupled from the substrate. After optimization of the preparation procedure, the proposed synthesis method can represent a further big step toward graphene-based electronic technologies.
引用
收藏
页码:992 / 995
页数:4
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