Optical constants of cubic GaN, AlN, and AlGaN alloys

被引:57
作者
Suzuki, T
Yaguchi, H
Okumura, H
Ishida, Y
Yoshida, S
机构
[1] Saitama Univ, Dept Elect & Elect Syst, Urawa, Saitama 3388570, Japan
[2] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 6A期
关键词
spectroscopic ellipsometry; cubic GaN; cubic AlN; cubic AlGaN; optical constants; direct bandgap energy;
D O I
10.1143/JJAP.39.L497
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have used spectroscopic ellipsometry to investigate, for the first time, the optical constants of cubic GaN, AlN, and AlGaN alloy epitaxial layers grown by molecular beam epitaxy. The refractive indices of cubic AlGaN were found to decrease with increasing Al content, as expected from the empirical observation that the refractive index decreases with increasing direct bandgap energy. In the transparent wavelength region, the refractive indices of cubic AlGaN with lower Al contents are somewhat larger than those of hexagonal modifications, while with higher Al contents, the refractive indices of cubic AlGaN and hexagonal AlGaN are almost equal. We also found that the direct bandgap energies of cubic AlGaN show a parabolic dependence on the Al content.
引用
收藏
页码:L497 / L499
页数:3
相关论文
共 10 条
[1]   MODEL DIELECTRIC-CONSTANTS OF GAP, GAAS, GASB, INP, INAS, AND INSB [J].
ADACHI, S .
PHYSICAL REVIEW B, 1987, 35 (14) :7454-7463
[2]  
Ambacher O, 1997, MRS INTERNET J N S R, V2, pU3
[3]  
Köhler U, 1999, J APPL PHYS, V85, P404, DOI 10.1063/1.369398
[4]   InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate [J].
Nakamura, S ;
Senoh, M ;
Nagahama, S ;
Iwasa, N ;
Yamada, T ;
Matsushita, T ;
Kiyoku, H ;
Sugimoto, Y ;
Kozaki, T ;
Umemoto, H ;
Sano, M ;
Chocho, K .
APPLIED PHYSICS LETTERS, 1998, 72 (02) :211-213
[5]  
Okumura H, 1999, PHYS STATUS SOLIDI B, V216, P211, DOI 10.1002/(SICI)1521-3951(199911)216:1<211::AID-PSSB211>3.0.CO
[6]  
2-J
[7]   Growth and characterization of cubic GaN [J].
Okumura, H ;
Ohta, K ;
Feuillet, G ;
Balakrishnan, K ;
Chichibu, S ;
Hamaguchi, H ;
Hacke, P ;
Yoshida, S .
JOURNAL OF CRYSTAL GROWTH, 1997, 178 (1-2) :113-133
[8]  
PANKOVE JI, 1990, MATER RES SOC SYMP P, V162, P515
[9]   QUASI-PARTICLE BAND-STRUCTURE OF ALN AND GAN [J].
RUBIO, A ;
CORKILL, JL ;
COHEN, ML ;
SHIRLEY, EL ;
LOUIE, SG .
PHYSICAL REVIEW B, 1993, 48 (16) :11810-11816
[10]   Metalorganic vapor phase epitaxy growth of high quality cubic GaN on GaAs (100) substrates [J].
Wu, J ;
Yaguchi, H ;
Onabe, K ;
Shiraki, Y ;
Ito, R .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B) :1440-1442