Dislocated epitaxial islands

被引：30

作者：

Liu, XH ^{[1
]}

Ross, FM ^{[1
]}

Schwarz, KW ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.85.4088

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Dislocation networks observed in CoSi2 islands grown epitaxially on Si are compared with the results of dislocation-dynamics calculations. The calculations make use of the fact that image forces play a relatively minor role compared to line tension forces and dislocation-dislocation interactions. Remarkable agreement is achieved, demonstrating that this approach can be applied more generally to study dislocations in other mesostructures.

引用

页码：4088 / 4091

页数：4

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