Dislocated epitaxial islands

Dislocation networks observed in CoSi2 islands grown epitaxially on Si are compared with the results of dislocation-dynamics calculations. The calculations make use of the fact that image forces play a relatively minor role compared to line tension forces and dislocation-dislocation interactions. Remarkable agreement is achieved, demonstrating that this approach can be applied more generally to study dislocations in other mesostructures.