A simple analytical method for the characterization of the melt region of a semiconductor under focused laser irradiation

被引：5

作者：

Degorce, JY

Saucier, A

Meunier, M

机构：

[1] Ecole Polytech, Laser Proc Lab, Dept Engn Phys, Stn Ctr Ville, Montreal, PQ H3C 3A7, Canada

[2] Ecole Polytech, Dept Appl Math & Ind Engn, Stn Ctr Ville, Montreal, PQ H3C 3A7, Canada

来源：

APPLIED SURFACE SCIENCE | 2003年 / 208卷

关键词：

laser melting; semiconductors; dopant diffusion;

D O I：

10.1016/S0169-4332(02)01350-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A simple analytical approach, based on an energy balance equation, is introduced to describe the melt region of a semiconductor under a focused pulsed laser irradiation. In this model, an approximate analytical solution of the time-dependent hemispherical melt radius is calculated, and satisfactorily compared with experiments on silicon irradiated with a focused, 1 mus beam diameter, visible laser of a few watts with pulse widths of 0.03-10 mus. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：267 / 271

页数：5

共 9 条

[1]

[Anonymous], 1963, JON J APPL PHYS

[2]

Bauerle D., 2000, ADV TEXTS PHYS

[3]

Carslaw H.S., 1988, Conduction of Heat in Solids, Vsecond

[4] A novel laser trimming technique for microelectronics [J].