Negative characteristic temperature of InGaAs quantum dot injection laser

被引：87

作者：

Zhukov, AE ^{[1
]}

Ustinov, VM ^{[1
]}

Egorov, AY ^{[1
]}

Kovsh, AR ^{[1
]}

Tsatsulnikov, AF ^{[1
]}

Ledentsov, NN ^{[1
]}

Zaitsev, SV ^{[1
]}

Gordeev, NY ^{[1
]}

Kopev, PS ^{[1
]}

Alferov, ZI ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 6B期

关键词：

injection laser; quantum dot; characteristic temperature; THRESHOLD CURRENT; MATRIX;

D O I：

10.1143/JJAP.36.4216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The range of negative characteristic temperatures in temperature dependences of threshold current density of low-threshold (In,Ga)As/(Al,Ga)As quantum dot injection lasers has been observed. A model describing the decrease in threshold current density with temperature at low temperatures is proposed.

引用

收藏

页码：4216 / 4218

页数：3

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