Time-resolved cathodoluminescence assessment of deep-level transitions in hydride-vapor-phase-epitaxy GaN

被引:17
作者
Díaz-Guerra, C
Piqueras, J
Cavallini, A
机构
[1] Univ Complutense Madrid, Fac Fis, Dept Fis Mat, E-28040 Madrid, Spain
[2] Univ Bologna, INFM, I-40127 Bologna, Italy
[3] Univ Bologna, Dipartmento Fis, I-40127 Bologna, Italy
关键词
D O I
10.1063/1.1565501
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temporal behavior of deep-level luminescence emissions in undoped hydride-vapor-phase-epitaxy GaN layers of different thicknesses has been investigated by time-resolved cathodoluminescence (TRCL). The complex nature of the yellow luminescence is revealed in the TRCL spectra by the presence of two bands peaked at 2.22 and 2.03 eV. A red band with a decay time of 700 mus, centered at about 1.85 eV, dominates spectra recorded for long delay times. Exponential transients with associated decay times of hundreds of mus were measured at 87 K for all the deep-level emissions found in the layers. (C) 2003 American Institute of Physics.
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页码:2050 / 2052
页数:3
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