Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy

被引：31

作者：

Korotkov, RY

Reshchikov, MA ^{[1
]}

Wessels, BW

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Ctr Mat Res, Evanston, IL 60208 USA

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

基金：

美国国家科学基金会;

关键词：

GaN; photoluminescence; donor-acceptor pairs; defects;

D O I：

10.1016/S0921-4526(99)00411-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Transient behavior of the 2.3, 2.9 and 3.27 eV photoluminescence (PL) bands in undoped GaN is studied. A nonexponential decay of PL intensity is observed for all three bands after pulsed excitation at low temperature. Transition rates were measured for the three bands. Quantitative analysis of the PL decay indicates that all three bands are associated with donor acceptor pair (DAP) transitions involving a shallow donor and three acceptor states of different origins. The transition rate decreases with decreasing band energy or increasing thermal ionization energy of the acceptor. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：80 / 83

页数：4

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