Side-by-side silicon carbide-silica biaxial nanowires: Synthesis, structure, and mechanical properties

被引：236

作者：

Wang, ZL ^{[1
]}

Dai, ZR

Gao, RP

Bai, ZG

Gole, JL

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[3] Univ Sci & Technol Beijing, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 21期

关键词：

D O I：

10.1063/1.1327281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Elevated-temperature synthesis has been used to generate side-by-side biaxially structured silicon carbide-silica nanowires. The axial growth direction approaches [311] for nanowires with a high density of microtwins and is [211] for defect-free nanowires. The structure of these nanowires, their cross-sectional shape, and their structural transformation between a biaxial and coaxial configuration have been studied by transmission electron microscopy. The Young's modulus of the biaxially structured nanowires was measured to be 50-70 GPa depending on the size of the nanowire. (C) 2000 American Institute of Physics. [S0003-6951(00)02347-0].

引用

页码：3349 / 3351

页数：3

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