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Voc from a Morphology Point of View: the Influence of Molecular Orientation on the Open Circuit Voltage of Organic Planar Heterojunction Solar Cells
被引:78
作者:

Hoermann, Ulrich
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Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Lorch, Christopher
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机构:
Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Hinderhofer, Alexander
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机构:
Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany
Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Gerlach, Alexander
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Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Gruber, Mark
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Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Kraus, Julia
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Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Sykora, Benedikt
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Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Grob, Stefan
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Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Linderl, Theresa
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Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Wilke, Andreas
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Humboldt Univ, Dept Phys, D-12489 Berlin, Germany Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Opitz, Andreas
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Humboldt Univ, Dept Phys, D-12489 Berlin, Germany Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

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Anselmo, Ana Sofia
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Karlstad Univ, Dept Engn & Phys, SE-65188 Karlstad, Sweden Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Ozawa, Yusuke
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Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Nakayama, Yasuo
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Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Ishii, Hisao
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Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan
Chiba Univ, Ctr Frontier Sci, Inage Ku, Chiba 2638522, Japan Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Koch, Norbert
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Humboldt Univ, Dept Phys, D-12489 Berlin, Germany
Helmholtz Zentrum Berlin Mat & Energie GmbH BESSY, D-12489 Berlin, Germany Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

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Schreiber, Frank
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Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

Bruettig, Wolfgang
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Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany
机构:
[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany
[2] Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany
[3] Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan
[4] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany
[5] Karlstad Univ, Dept Engn & Phys, SE-65188 Karlstad, Sweden
[6] Chiba Univ, Ctr Frontier Sci, Inage Ku, Chiba 2638522, Japan
[7] Helmholtz Zentrum Berlin Mat & Energie GmbH BESSY, D-12489 Berlin, Germany
关键词:
THIN-FILMS;
PHOTOVOLTAIC DEVICES;
DIINDENOPERYLENE;
SEXITHIOPHENE;
ACCEPTOR;
DONOR;
INTERFACE;
ENERGY;
BULK;
ABSORPTION;
D O I:
10.1021/jp506180k
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
The film morphology and device performance of planar heterojunction solar cells based on the molecular donor material α-sexithiophene (6T) are investigated. Planar heterojunctions of 6T with two different acceptor molecules, the C60 fullerene and diindenoperylene (DIP), have been prepared. The growth temperature of the 6T bottom layer has been varied between room temperature and 100°C for each acceptor. By means of X-ray diffraction and X-ray absorption, we show that the crystallinity and the molecular orientation of 6T is influenced by the preparation conditions and that the 6T film templates the growth of the subsequent acceptor layer. These structural changes are accompanied by changes in the characteristic parameters of the corresponding photovoltaic cells. This is most prominently observed as a shift of the open circuit voltage (Voc): In the case of 6T/C60 heterojunctions, Voc decreases from 0.4 to 0.3 V, approximately, if the growth temperature of 6T is increased from room temperature to 100°C. By contrast, Voc increases from about 1.2 V to almost 1.4 V in the case of 6T/DIP solar cells under the same conditions. We attribute these changes upon substrate heating to increased recombination in the C60 case while an orientation dependent intermolecular coupling seems to change the origin of the photovoltaic gap in the DIP case. (Graph Presented). © 2014 American Chemical Society.
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页码:26462 / 26470
页数:9
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Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
[10]
Re-evaluating the Role of Sterics and Electronic Coupling in Determining the Open-Circuit Voltage of Organic Solar Cells
[J].
Graham, Kenneth R.
;
Erwin, Patrick
;
Nordlund, Dennis
;
Vandewal, Koen
;
Li, Ruipeng
;
Ndjawa, Guy O. Ngongang
;
Hoke, Eric T.
;
Salleo, Alberto
;
Thompson, Mark E.
;
McGehee, Michael D.
;
Amassian, Aram
.
ADVANCED MATERIALS,
2013, 25 (42)
:6076-6082

Graham, Kenneth R.
论文数: 0 引用数: 0
h-index: 0
机构:
KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia

Erwin, Patrick
论文数: 0 引用数: 0
h-index: 0
机构:
Univ So Calif, Dept Chem, Los Angeles, CA 90089 USA KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia

Nordlund, Dennis
论文数: 0 引用数: 0
h-index: 0
机构:
SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia

Vandewal, Koen
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia

Li, Ruipeng
论文数: 0 引用数: 0
h-index: 0
机构:
KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia

Ndjawa, Guy O. Ngongang
论文数: 0 引用数: 0
h-index: 0
机构:
KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia

Hoke, Eric T.
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia

Salleo, Alberto
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h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia

Thompson, Mark E.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ So Calif, Dept Chem, Los Angeles, CA 90089 USA KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia

McGehee, Michael D.
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia

Amassian, Aram
论文数: 0 引用数: 0
h-index: 0
机构:
KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia