Magnetic tunnel junctions with single-crystal electrodes: A crystal anisotropy of tunnel magneto-resistance

被引：64

作者：

Yuasa, S

Sato, T

Tamura, E

Suzuki, Y

Yamamori, H

Ando, K

Katayama, T

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[2] ATP, JRCAT, Tsukuba, Ibaraki 3050046, Japan

[3] NAIR, Natl Inst Adv Interdisciplinary, JRCAT, Tsukuba, Ibaraki 3058562, Japan

来源：

EUROPHYSICS LETTERS | 2000年 / 52卷 / 03期

关键词：

D O I：

10.1209/epl/i2000-00445-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A strong dependence of tunnel magnetoresistance (TMR) on the crystal orientation of ferromagnetic electrodes was confirmed experimentally. We studied the TMR of Fe/Al2O3/Fe50Co50 tunnel junctions with single-crystal Fe electrodes of different crystal orientations and found that the TMR ratio increased from 13% to 42% at 2K (8% to 26% at room temperature) when the crystal orientation was changed from (100) to (211). Such a TMR anisotropy could be explained in terms of the anisotropic spin polarization of Fe bulk and/or interface electronic states. The importance of the "momentum-filtering'' effect of the tunnel barrier was also discussed.

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页码：344 / 350

页数：7

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