Structural, Electronics and Optical Properties of CaO

被引：24

作者：

Albuquerque, E. L. ^{[1
]}

Vasconcelos, M. S. ^{[2
]}

机构：

[1] Univ Fed Rio Grande do Norte, Dept Fis, BR-59072970 Natal, RN, Brazil

[2] Ctr Fed Educ Tecnol Ma, Dept Ciencis Exatas, Sao Luis, MA 65025, Brazil

来源：

PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY | 2008年 / 100卷

关键词：

D O I：

10.1088/1742-6596/100/4/042006

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The carrier effective masses of CaO in the cubic phase are estimated by ab initio calculations, which are used for the simulation of Si/CaO metal-oxide-semiconductor (MOS) devices by solving Schrodinger and Poisson equations self consistently. It is shown that higher switching speed, longer lifetimes, and higher endurance can be obtained replacing SiO2 by CaO as gate dielectric, suggesting promising biomedical applications for Si/CaO-based MOS devices due to the CaO bio-compatibility.

引用

页数：4

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