Prevention of nanoparticle coalescence under high-temperature annealing

被引：51

作者：

Mizuno, M ^{[1
]}

Sasaki, Y ^{[1
]}

Yu, ACC ^{[1
]}

Inoue, M ^{[1
]}

机构：

[1] Sony Corp, Sendai Technol Ctr, Tagajo, Miyagi 9850842, Japan

来源：

LANGMUIR | 2004年 / 20卷 / 26期

关键词：

D O I：

10.1021/la0481694

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An effective method of employing 3-aminopropyldimethylethoxysilane linker molecules to stabilize 4.4 nm FePt nanoparticle monolayer films on a SiO2 substrate as well as to prevent coalescence of the particles under 800 degreesC annealing is reported. As-deposited FePt nanoparticle films in chemically disordered face-centered-cubic phase transform to mostly chemically ordered L1(0) structure after annealing, while the nanoparticles are free from serious coalescence. The method may fulfill the pressing need to prevent nanoparticle coalescence under high-temperature annealing for the development of FePt nanoparticle based products, such as ultrahigh-density magnetic recording media and novel memory devices.

引用

页码：11305 / 11307

页数：3

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