The APD annihilation mechanism of 3C-SiC hetero-epilayer on Si(001) substrate

被引：6

作者：

Ishida, Y

Takahashi, T

Okumura, H

Sekigawa, T

Yoshida, S

机构：

[1] Electrotech Lab, UPR Ultra Low Loss Power Device Technol Res Body, Tsukuba, Ibaraki 3058568, Japan

[2] Saitama Univ, Urawa, Saitama 3388570, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

3C-SiC; APCVD; APDs annihilation mechanism; growth mode; LPCVD; simulation;

D O I：

10.4028/www.scientific.net/MSF.338-342.253

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heteroepitaxial layers of 3C-SiC on Si(001) without antiphase domains (APDs), which can hardly be obtained by atmospheric pressure chemical Vapor deposition (APCVD), can be obtained by low-pressure chemical vapor deposition method (LPCVD) despite using on-axis Si(001) substrate. LPCVD is different from APCVD in the growth mode, i.e., three dimensional (3D) island growth in APCVD and step-flow growth in LPCVD. This difference is attributed to the difference of the main Si species to carry Si atoms onto the grown surface. Based on these results, we propose a new APD annihilation model taking account of the difference in the main Si species and the confirmation of this model is demonstrated by the cellar automata (CA) simulation.

引用

页码：253 / 256

页数：4

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