Atomically flat 3C-SiC epilayers by low pressure chemical vapor deposition

被引：49

作者：

Ishida, Y ^{[1
]}

Takahashi, T ^{[1
]}

Okumura, H ^{[1
]}

Yoshida, S ^{[1
]}

Sekigawa, T ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 11期

关键词：

3C-SiC; heteroepitaxial growth; LPCVD; gas velocity; atomically flat surfaces; XRD; PL;

D O I：

10.1143/JJAP.36.6633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the heteroepitaxial growth of 3C-SiC on Si by low pressure chemical vapor deposition (LPCVD) using a silane-propane-hydrogen reaction gas system. By the growth at low pressure below 10 Torr, several problems arising from atmospheric pressure CVD (APCVD) were solved, namely the growth of protrusions was suppressed and thickness uniformity was improved. Moreover, atomically flat surfaces were obtained. Although the growth temperatures in the case of LPCVD were lower than those in the case of APCVD, LPCVD epilayers showed excellent crystallinity and luminescence properties, comparable with those of APCVD epilayers.

引用

页码：6633 / 6637

页数：5

共 24 条

[1] BEHAVIOR OF ION-IMPLANTED JUNCTION DIODES IN 3C SIC [J].