BEHAVIOR OF ION-IMPLANTED JUNCTION DIODES IN 3C SIC

被引：22

作者：

AVILA, RE ^{[1
]}

KOPANSKI, JJ ^{[1
]}

FUNG, CD ^{[1
]}

机构：

[1] CASE WESTERN RESERVE UNIV,CASE INST TECHNOL,DEPT ELECT ENGN,CLEVELAND,OH 44106

来源：

关键词：

D O I：

10.1063/1.339291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3469 / 3471

页数：3

共 13 条

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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1355 - +
[2] BLANK JM, 1974, SILICON CARBIDE 1973, P550
[3] DIODES IN SILICON CARBIDE BY ION IMPLANTATION
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MARSH, OJ
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 311 - +
[4] 3C-SIC P-N-JUNCTION DIODES
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UEMOTO, A
SHIGETA, M
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NAKAJIMA, S
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (22) : 1536 - 1537
[5] GIBBONS JF, 1975, PROJECTED RANGE STAT
[6] KEYES RW, 1974, SILICON CARBIDE 1973, P534
[7] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462
[8] ANTIPHASE BOUNDARIES IN EPITAXIALLY GROWN BETA-SIC
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CHOREY, CM
POWELL, JA
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 221 - 223
[9] POTTER RM, 1969, MAT RES B, V4, pS223
[10] RYU J, 1986, MATER RES SOC S P, V52, P165