Hole response time and the experimental test of the Einstein relation

被引:3
作者
Bruggemann, R
机构
[1] Fachbereich Physik, Carl von Ossietzky Universität
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 11期
关键词
D O I
10.1103/PhysRevB.56.6408
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The concept for the experimental test of the Einstein relation for non-Gaussian transport as suggested by Q. Gu et al. [Phys. Rev. Lett. 76, 3196 (1996)] is critically examined. It is shown that the photocurrent response time, which is employed to set the time scale for comparing drift and diffusion of excess holes! is instead related to the decay of the excess electron population and therefore not suitable for a correct use in the experimental test in a general manner. It is demonstrated that the minority hole population decay time, as needed for the experimental test, is found to be typically larger than the decay time for majority electrons. A reevaluation of the experimental data with this insight provides improved evidence that the Einstein relation holds under the above conditions of non-Gaussian hole transport.
引用
收藏
页码:6408 / 6411
页数:4
相关论文
共 11 条
[1]   PHOTOCONDUCTIVITY RESPONSE-TIME IN AMORPHOUS-SEMICONDUCTORS [J].
ADRIAENSSENS, GJ ;
BARANOVSKII, SD ;
FUHS, W ;
JANSEN, J ;
OKTU, O .
PHYSICAL REVIEW B, 1995, 51 (15) :9661-9667
[2]  
BRUGGEMANN R, 1992, MATER RES SOC S P, V258, P729
[3]  
Bruggemann R., 1993, THESIS PHILIPPS U MA
[4]  
BRUGGEMANN R, 1993, P 11 EUR PHOT SOL EN, P676
[5]   Non-Gaussian transport measurements and the Einstein relation in amorphous silicon [J].
Gu, Q ;
Schiff, EA ;
Grebner, S ;
Wang, F ;
Schwarz, R .
PHYSICAL REVIEW LETTERS, 1996, 76 (17) :3196-3199
[6]   SOLUTION OF THE MU-TAU PROBLEM IN A-SI-H [J].
KOCKA, J ;
NEBEL, CE ;
ABEL, CD .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (01) :221-246
[7]  
MAIN C, 1991, NEW PHYSICAL PROBLEMS IN ELECTRONIC MATERIALS, P55
[8]   AMBIPOLAR TRANSPORT IN AMORPHOUS-SEMICONDUCTORS IN THE LIFETIME AND RELAXATION-TIME REGIMES INVESTIGATED BY THE STEADY-STATE PHOTOCARRIER GRATING TECHNIQUE [J].
RITTER, D ;
ZELDOV, E ;
WEISER, K .
PHYSICAL REVIEW B, 1988, 38 (12) :8296-8304
[9]  
Rose A, 1963, CONCEPTS PHOTOCONDUC
[10]   Photoconductivity of a-Si:H as a function of doping, temperature and photocarrier generation rates between 10(13) and 10(28)cm(-3)s(-1) [J].
Stradins, P ;
Fritzsche, H ;
Kopidakis, N ;
Tzanetakis, P .
AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 :765-770