Crystallization and disappearance of defects of the annealed silicon nanowires

被引：21

作者：

Niu, JJ

Sha, H

Wang, YW

Ma, XY

Yang, DR ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 66卷 / 1-4期

关键词：

crystallization; stacking faults; SiNWs; annealing;

D O I：

10.1016/S0167-9317(03)00026-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The crystallization and the disappearance of the defects and impurity stress of silicon nanowires (SiNWs) after annealing at high temperature (900 degreesC) have been investigated. The chemical-vapor-deposition (CVD) and alumina template technology were used for the synthesis of the SiNWs. Then transmission electron microscopy (TEM), selected-area electron diffraction (SAED) and photoluminescence (PL) spectra were used to study the crystallization procedure and the disappearance of defects of the SiNWs. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：65 / 69

页数：5

共 18 条

[1]

BOOSTMA GA, 1971, J CRYST GROWTH, V10, P223

[2]

DORINOUS D, 2000, MICROELECTRONIC ENG, V53, P199

[3] Effects of ambient pressure on silicon nanowire growth [J].

Fan, XH ;

Xu, L ;

Li, CP ;

Zheng, YF ;

Lee, CS ;

Lee, ST .

CHEMICAL PHYSICS LETTERS, 2001, 334 (4-6) :229-232

[4]

GIVARGIZOW EI, 1975, J CRYST GROWTH, V20, P323

[5] Semiconductor nanowires: synthesis, structure and properties [J].

Lee, ST ;

Wang, N ;

Lee, CS .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2000, 286 (01) :16-23

[6] Synthesis of silicon nanowires using AuPd nanoparticles catalyst on silicon substrate [J].

Liu, ZQ ;

Pan, ZW ;

Sun, LF ;

Tang, DS ;

Zhou, WY ;

Wang, G ;

Qian, LX ;

Xie, SS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2000, 61 (07) :1171-1174

[7] Template-directed self-assembly of buried nanowires and the pearling instability [J].

Müller, T ;

Heinig, KH ;

Schmidt, B .

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 19 (1-2) :209-213

[8] Electroluminescent solid state devices based on silicon nanowires, fabricated by using lithography and etching techniques [J].

Nassiopoulos, AG ;

Grigoropoulos, S ;

Papadimitriou, D .

THIN SOLID FILMS, 1997, 297 (1-2) :176-178

[9]

NIU JJ, IN PRESS CHEM PHYS L

[10] Bismuth quantum-wires arrays fabricated by electrodeposition in nanoporous anodic aluminum oxide and its structural properties [J].

Peng, Y ;

Qin, DH ;

Zhou, RJ ;

Li, HL .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 77 (03) :246-249

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