P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors

被引：22

作者：

Mizutani, A ^{[1
]}

Hatori, N ^{[1
]}

Ohnoki, N ^{[1
]}

Nishiyama, N ^{[1
]}

Ohtake, N ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 226, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 11期

关键词：

VCSELs; GaAs(311)B; DBR; p-type doping; MOCVD; carbon;

D O I：

10.1143/JJAP.36.6728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high p-type hole-concentration AlAs layer has been successfully grown on a GaAs (311)B substrate by metalorganic chemical vapor deposition with using a Carbon auto-doping technique. The doping concentration was well controlled by changing only V/III ratios. The hole concentration was as high as 2 x 10(19) cm(-3) at a V/III ratio of 6. A very low resistance of p-type distributed Bragg reflector was obtained with a a-doping technique to GaAs/AlAs interfaces.

引用

页码：6728 / 6729

页数：2

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