Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine

被引：15

作者：

Sekiguchi, S

Miyamoto, T

Koyama, F

Iga, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 5A期

关键词：

carbon doping; aluminum arsenide; p-DBR; VCSEL; trimethylaluminum; tertiarybutylarsine;

D O I：

10.1143/JJAP.36.2638

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon (C) heavily doped AlAs has been grown by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum (TMAI) and tertiarybutylarsine (TBA) without any additional dopant sources. The hole concentration was controlled by changing only the V/III ratio. The highest hole concentration was 2.5 x 10(10) cm(-3). The decrease in the lattice constant of C-doped AlAs shows that the acceptor activation ratio is close to unity.

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页码：2638 / 2639

页数：2

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